[go: up one dir, main page]

Garzon et al., 2005 - Google Patents

Temperature-Dependent Asymmetry of the Nonlocal Spin-Injection Resistance:<? format?> Evidence for Spin Nonconserving Interface Scattering

Garzon et al., 2005

View PDF
Document ID
9733716134057073988
Author
Garzon S
Žutić I
Webb R
Publication year
Publication venue
Physical review letters

External Links

Snippet

We report nonlocal spin injection and detection experiments on mesoscopic Co-Al 2 O 3-Cu spin valves. We have observed a temperature-dependent asymmetry in the nonlocal resistance between parallel and antiparallel configurations of the magnetic injector and …
Continue reading at arxiv.org (PDF) (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/10—Plotting field distribution; Measuring field distribution
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/06—Hall-effect devices
    • H01L43/065—Semiconductor Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00 and G01R33/00 - G01R35/00

Similar Documents

Publication Publication Date Title
Garzon et al. Temperature-Dependent Asymmetry of the Nonlocal Spin-Injection Resistance:<? format?> Evidence for Spin Nonconserving Interface Scattering
Humphries et al. Observation of spin-orbit effects with spin rotation symmetry
Niimi et al. Reciprocal spin Hall effects in conductors with strong spin–orbit coupling: a review
Lau et al. Spin torque efficiency of Ta, W, and Pt in metallic bilayers evaluated by harmonic Hall and spin Hall magnetoresistance measurements
Zhang Spin Hall effect in the presence of spin diffusion
Liebing et al. Tunneling magnetothermopower in magnetic tunnel junction nanopillars
Reichlová et al. Current-induced torques in structures with ultrathin IrMn antiferromagnets
Viret et al. Anisotropy of domain wall resistance
Gomez-Perez et al. Strong interfacial exchange field in a heavy metal/ferromagnetic insulator system determined by spin Hall magnetoresistance
Viglin et al. Electric measurement and magnetic control of spin transport in InSb-based lateral spin devices
Otani et al. Manipulation of spin currents in metallic systems
Bose et al. Recent advances in the spin Nernst effect
Kuschel et al. Tunnel magneto-Seebeck effect
Zhu et al. Boosting spin-orbit-torque efficiency in spin-current-generator/magnet/oxide superlattices
Moghaddam et al. Observation of an unexpected negative magnetoresistance in magnetic weyl semimetal Co3Sn2S2
Damerio et al. Magnetoresistive detection of perpendicular switching in a magnetic insulator
Brataas Insulating magnets control neighbor’s conduction
Magni et al. Spin hall magnetoresistance and spin–orbit torque efficiency in Pt/FeCoB bilayers
Johnson Spin injection in metal films: The bipolar spin transistor
Tu et al. Spin-dependent thermoelectric effect in Co2Fe0. 4Mn0. 6Si thin film with perpendicular magnetic anisotropy
Zhang Probing spin currents in semiconductors
Hao et al. Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement
US9704551B2 (en) Magnetic tunnel junction switching assisted by temperature-gradient induced spin torque
Peterson et al. Annealing Temperature Effects on Spin Hall Magnetoresistance in Perpendicularly Magnetized W/CoFeB Bilayers
Jedema et al. Spin Injection and Spin Accumulation in Permalloy–Copper Mesoscopic Spin Valves