[go: up one dir, main page]

Margomenos et al., 2001 - Google Patents

Silicon micromachined interconnects for on-wafer packaging of MEMS devices

Margomenos et al., 2001

Document ID
9794425389141719399
Author
Margomenos A
Peroulis D
Becker J
Katehi L
Publication year
Publication venue
2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No. 01EX496)

External Links

Snippet

A silicon micromachined on-wafer packaging scheme for RF MEMS switches is proposed that has excellent performance at K-band. The designed RF transition has an insertion loss of 0.1 dB and a return loss of 32 dB at 20 GHz along with a 55% bandwidth of operation. A …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body

Similar Documents

Publication Publication Date Title
TW564448B (en) Monolithic single pole double throw RF MEMS switch
US7276787B2 (en) Silicon chip carrier with conductive through-vias and method for fabricating same
US9284185B2 (en) Integrated circuit switches, design structure and methods of fabricating the same
US8445306B2 (en) Hybrid MEMS RF switch and method of fabricating same
US7675162B2 (en) Interconnect structure using through wafer vias and method of fabrication
US20030104649A1 (en) Method for making CMOS-based monolithic micro electromechanical system (MEMS) integrated circuits and integrated circuits made thereby
CN101620952B (en) Ohm contact type radio frequency switch and integration process thereof
US5633122A (en) Test fixture and method for producing a test fixture for testing unpackaged semiconductor die
US6696645B2 (en) On-wafer packaging for RF-MEMS
JP2004523124A (en) Method of structuring a flat substrate made of glass-based material
Margomenos et al. Silicon micromachined interconnects for on-wafer packaging of MEMS devices
Margomenos et al. Silicon micromachined packages for RF MEMS switches
Margomenos et al. DC to 40 GHz on-wafer package for RF MEMS switches
Moriyama et al. Metal‐bonding‐based hermetic wafer‐level MEMS packaging technology using in‐plane feedthrough: Hermeticity and high frequency characteristics of thick gold film feedthrough
Wang et al. Fabrication of high power RF MEMS switches
Muldavin et al. Wide-band low-loss MEMS packaging technology
Zhang et al. RF MEMS switch integrated on printed circuit board with metallic membrane first sequence and transferring
Giridhar et al. Design, fabrication, testing and packaging of a silicon micromachined radio frequency microelectromechanical series (RF MEMS) switch
JP4471673B2 (en) Method for assembling MEMS and IC to substrate and method for manufacturing MEMS device
Buttiglione et al. Alumina and LTCC technology for RF MEMS switches and true time delay lines
Margomenos Three dimensional integration and packaging using silicon micromachining
US20180024186A1 (en) Method, device and system for measuring an electrical characteristic of a substrate
Persano et al. Wafer-level thin film micropackaging for RF MEMS applications
Liu et al. High performance RF MEMS series contact switch—Process considerations and device performance
Kopp Microwave performance and fabrication of quilt packaging, a novel chip-to-chip interconnect technology