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Yamamoto et al., 2025 - Google Patents

Reduction of Control Delay in Single-Back and Double-Front Gate-Controlled IGBT for High Frequency Applications

Yamamoto et al., 2025

Document ID
10064466405671358777
Author
Yamamoto T
Kobayashi Y
Fukui M
Matsudai T
Gejo R
Saraya T
Itou K
Takakura T
Suzuki S
Ohashi T
Sakano T
Inokuchi T
Hiramoto T
Publication year
Publication venue
2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

External Links

Snippet

Insulated Gate Bipolar Transistors (IGBTs) with a back gate (BG), which is independently controlled from the main gate (MG), can reduce tail current and turn-off loss. The BG reduces the carriers on the backside prior to the MG turning off the IGBTs. However, conventional …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

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    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
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    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
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    • H03K2217/0036—Means reducing energy consumption

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