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Kang et al., 2018 - Google Patents

A comparative study on racetrack memories: Domain wall vs. skyrmion

Kang et al., 2018

Document ID
10221366731222422966
Author
Kang W
Chen X
Zhu D
Zhang X
Zhou Y
Qiu K
Zhang Y
Zhao W
Publication year
Publication venue
2018 IEEE 7th Non-Volatile Memory Systems and Applications Symposium (NVMSA)

External Links

Snippet

Racetrack memory (RM), a new storage scheme in which information flows along a nanotrack, has been considered as a potential candidate for future high-density storage device instead of the hard disk drive (HDD). The first RM, which was proposed in 2008 by …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell

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