[go: up one dir, main page]

Tauke-Pedretti et al., 2013 - Google Patents

Inp tunable ring resonator filters

Tauke-Pedretti et al., 2013

View PDF
Document ID
10376535695668022951
Author
Tauke-Pedretti A
Vawter G
Skogen E
Peake G
Overberg M
Alford C
Torres D
Cajas F
Publication year
Publication venue
Optoelectronic Integrated Circuits Xv

External Links

Snippet

Optical channelizing filters with narrow linewidth are of interest for optical processing of microwave signals. Fabrication tolerances make it difficult to place exactly the optical resonance frequency within the microwave spectrum as is required for many applications …
Continue reading at www.osti.gov (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
    • H01S5/125—Distributed Bragg reflector lasers (DBR-lasers)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/10—Light guides of the optical waveguide type
    • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/10—Light guides of the optical waveguide type
    • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/10—Light guides of the optical waveguide type
    • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S2301/00—Functional characteristics
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves

Similar Documents

Publication Publication Date Title
Tran et al. Ring-resonator based widely-tunable narrow-linewidth Si/InP integrated lasers
Haq et al. Micro‐transfer‐printed III‐V‐on‐silicon C‐band semiconductor optical amplifiers
Park et al. Device and integration technology for silicon photonic transmitters
Heck et al. Hybrid silicon photonic integrated circuit technology
Kurczveil et al. An integrated hybrid silicon multiwavelength AWG laser
Fang et al. Single-wavelength silicon evanescent lasers
US9442247B2 (en) Branched shape optical isolator and optical apparatus, method and applications
US11211773B2 (en) Quantum cascade laser with monolithically integrated passive waveguide
Kurczveil et al. Characterization of insertion loss and back reflection in passive hybrid silicon tapers
Guzzon et al. Integrated InP-InGaAsP tunable coupled ring optical bandpass filters with zero insertion loss
JPH04240605A (en) Optical branch waveguide
CN104937791A (en) Laser device, light modulation device, and optical semiconductor element
Lu et al. Monolithic integration of a high-speed widely tunable optical coherent receiver
Sia et al. Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm
Zhao et al. On-chip laser with multimode interference reflectors realized in a generic integration platform
Rabus et al. Ring resonator lasers using passive waveguides and integrated semiconductor optical amplifiers
Ma et al. Hybrid-integrated 200 Gb/s REC-DML array transmitter based on photonic wire bonding technology
US7110169B1 (en) Integrated optical device including a vertical lasing semiconductor optical amplifier
Tauke-Pedretti et al. Inp tunable ring resonator filters
Carrara et al. Hybrid III-V/silicon photonic integrated circuits for high bitrates telecommunication applications
Davenport et al. Heterogeneous silicon/InP semiconductor optical amplifiers with high gain and high saturation power
Hubner et al. Laser diodes with integrated spot-size transformer as low-cost optical transmitter elements for telecommunications
Zhao et al. Novel lasers using multimode interference reflector
Lamponi Hybrid III-V on silicon lasers for telecommunication applications
Tauke-Pedretti et al. Cascaded double ring resonator filter with integrated SOAs