Paulauskas et al., 2020 - Google Patents
Spontaneous atomic ordering of dilute GaAsBi bismides: Structural and optical studyPaulauskas et al., 2020
View PDF- Document ID
- 10300673782828130061
- Author
- Paulauskas T
- Čechavičius B
- Karpus V
- Jočionis L
- Tumėnas S
- Devenson J
- Pačebutas V
- Stanionytė S
- Strazdienė V
- Geižutis A
- Čaplovičová M
- Vretenár V
- Walls M
- Kociak M
- Krotkus A
- Publication year
- Publication venue
- Journal of Apllied Physics
External Links
Snippet
The investigated dilute GaAs 1-x Bi x (x= 0.034-0.052) bismides have been MBE-grown on exact and low-angle offcut (001) GaAs as well as on (001) Ge substrates. Atomic-resolution scanning transmission electron microscopy and X-ray diffraction measurements show the …
- 230000003287 optical 0 title abstract description 26
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by using diffraction of the radiation, e.g. for investigating crystal structure; by using reflection of the radiation
- G01N23/207—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by using diffraction of the radiation, e.g. for investigating crystal structure; by using reflection of the radiation by means of diffractometry using detectors, e.g. using an analysing crystal or a crystal to be analysed in a central position and one or more displaceable detectors in circumferential positions
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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