[go: up one dir, main page]

Lippmaa et al., 1998 - Google Patents

Atom technology for Josephson tunnel junctions: SrTiO3 substrate surface

Lippmaa et al., 1998

Document ID
11024085195713987748
Author
Lippmaa M
Takahashi K
Ohtomo A
Ohashi S
Ohnishi T
Nakagawa N
Sato T
Iwatsuki M
Koinuma H
Kawasaki M
Publication year
Publication venue
Materials Science and Engineering: B

External Links

Snippet

We have studied the surface dynamics of SrTiO3 during wet etching and during subsequent high-temperature annealing. Real-time observation of the wet etching process by atomic force microscopy has made it possible to find optimal etching conditions which yield …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
    • H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
    • H01L39/2422—Processes for depositing or forming superconductor layers
    • H01L39/2454—Processes for depositing or forming superconductor layers characterised by the substrate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof

Similar Documents

Publication Publication Date Title
Pai et al. Physics of SrTiO3-based heterostructures and nanostructures: a review
Camillone Iii et al. New monolayer phases of n‐alkane thiols self‐assembled on Au (111): Preparation, surface characterization, and imaging
US6251835B1 (en) Surface planarization of high temperature superconductors
KR970007137B1 (en) Grain boundary junctions in high temperature super conductor films
Lippmaa et al. Atom technology for Josephson tunnel junctions: SrTiO3 substrate surface
Naito et al. Reflection high-energy electron diffraction and atomic force microscopy studies on homoepitaxial growth of SrTiO3 (001)
Koinuma et al. Laser MBE of ceramic thin films for future electronics
Posadas et al. Growth and novel applications of epitaxial oxide thin films
Weiss et al. Injection MOCVD: ferroelectric thin films and functional oxide superlattices
Migita et al. Epitaxial Bi4Ti3O12 thin film growth using Bi self-limiting function
Bals et al. TEM of ultra-thin DyBa2Cu3O7–x films deposited on TiO2 terminated SrTiO3
Yalisove et al. Growth of Thin Epitaxial CoSi2 Layers on Si (100)
US5877122A (en) Josephson element having a NdBa2 Cu3 O7-y superconductor thin-film wiring pattern
Silva et al. Fabricating nanometer-scale Ag lines and islands on Cu (100) surfaces
Zhu et al. Orientation of MgO thin films grown by pulsed laser deposition
Konstantinović et al. Self-assembled pit arrays as templates for the integration of Au nanocrystals in oxide surfaces
JP2569099B2 (en) Epitaxial growth method
KR100249782B1 (en) Process for preparing superconducting junction having a cubic yba2cu3ox barrier layer
Leca et al. Termination control of NdGaO3 crystal surfaces by selective chemical etching
Kawai et al. Layer controlled growth of oxide superconductors
Kim et al. Atomic control of homoepitaxial SrTiO3 films using laser molecular beam epitaxy
Jun et al. Fabrication of YSZ buffer layer by single source MOCVD technique for YBCO coated conductor
Koster et al. Growth studies of heteroepitaxial oxide thin films using reflection high-energy electron diffraction
Hojo et al. Topography change due to multilayer oxidation at SiO2/Si (111) interfaces
Lippmaa et al. Growth dynamics of oxide thin films at temperatures above 1000° C