Rughoobur et al., 2021 - Google Patents
Lifetime and Breakdown Mechanisms in Double-Gated Si FEAsRughoobur et al., 2021
- Document ID
- 11261069850553413244
- Author
- Rughoobur G
- Akinwande A
- Publication year
- Publication venue
- 2021 34th International Vacuum Nanoelectronics Conference (IVNC)
External Links
Snippet
We demonstrate the lifetime and breakdown mechanisms in dense (10 12 m− 2) self-aligned double-gated Si field emitter arrays. We perform measurements at relatively low currents of 10 nA for over 300 hrs but found that increasing the current to 50 nA causes catastrophic …
- 230000015556 catabolic process 0 title abstract description 17
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with micro-engineered cathode, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/15—Cathodes heated directly by an electric current
- H01J1/16—Cathodes heated directly by an electric current characterised by the shape
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted to the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Brodie et al. | Vacuum microelectronic devices | |
| US5717279A (en) | Field emission cathode with resistive gate areas and electron gun using same | |
| Guerrera et al. | Silicon field emitter arrays with current densities exceeding 100 A/cm 2 at gate voltages below 75 V | |
| US5723867A (en) | Field emission cathode having focusing electrode | |
| US6831403B2 (en) | Field emission display cathode assembly | |
| EP0833359B1 (en) | Field emission cathode type electron gun with individually-controlled cathode segments | |
| US6822380B2 (en) | Field-enhanced MIS/MIM electron emitters | |
| Allen et al. | The energy spectra of high-β electron emission sites on broad-area copper electrodes | |
| US5587628A (en) | Field emitter with a tapered gate for flat panel display | |
| Rughoobur et al. | Lifetime and Breakdown Mechanisms in Double-Gated Si FEAs | |
| US6577058B2 (en) | Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base | |
| US6255768B1 (en) | Compact field emission electron gun and focus lens | |
| US11404236B2 (en) | X-ray tube | |
| Neo et al. | Electron optical properties of microcolumn with field emitter | |
| US6686680B2 (en) | Method and apparatus for regulating electron emission in field emitter devices | |
| US6902458B2 (en) | Silicon-based dielectric tunneling emitter | |
| JP2002083555A (en) | Self-aligned electron souce device | |
| US7727039B2 (en) | Method of aging field emission devices | |
| KR20180006322A (en) | Vacuum electron tube with planar cathode based on nanotubes or nanowires | |
| Ngoc Minh et al. | Microelectron field emitter array with focus lenses for multielectron beam lithography based on silicon on insulator wafer | |
| Rughoobur et al. | Arrays of Si field emitter individually regulated by Si nanowires high breakdown voltages and enhanced performance | |
| US6847045B2 (en) | High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission | |
| US3959651A (en) | Electron microscope | |
| JPWO2004079910A1 (en) | Logical operation element and logical operation circuit using field emission type micro electron emitter | |
| US3950669A (en) | Erasing method for storage tube employing raster scan |