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Van Roy, 2005 - Google Patents

Spin Injection Experiments from Half-Metallic Ferromagnets into Semiconductors: The Case of NiMnSb and (Ga, Mn) As

Van Roy, 2005

Document ID
11212359283176709816
Author
Van Roy W
Publication year
Publication venue
Local-Moment Ferromagnets: Unique Properties for Modern Applications

External Links

Snippet

Materials with 100% conduction electron spin polarization are possible candidates for electrical spin injection into non-magnetic semiconductors, as they do not suffer from the conduction mismatch problem encountered by ferromagnetic metals with incomplete spin …
Continue reading at link.springer.com (other versions)

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
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    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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