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Lee et al., 2005 - Google Patents

Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy

Lee et al., 2005

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Document ID
11212658503162946533
Author
Lee Y
Tseng H
Kuo H
Wang S
Chang C
Hsu T
Yang Y
Hsieh M
Jou M
Lee B
Publication year
Publication venue
IEEE photonics technology letters

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Snippet

Quaternary AlGaInP light-emitting diodes (LEDs) operating at a wavelength of 630 nm with a stripe-patterned omni-directional reflector (ODR) were fabricated. It is demonstrated that the geometrical shape of stripe-patterned structure improves the light extraction efficiency by …
Continue reading at ir.lib.nycu.edu.tw (PDF) (other versions)

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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
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    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0079—Processes for devices with an active region comprising only III-V compounds wafer bonding or at least partial removal of the growth substrate
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