[go: up one dir, main page]

Piazza et al., 2004 - Google Patents

Dry-released post-CMOS compatible contour-mode aluminum nitride micromechanical resonators for VHF applications

Piazza et al., 2004

View PDF
Document ID
11564221299276498352
Author
Piazza G
Pisano A
Publication year
Publication venue
Tech. Dig. Solid-State Sens. Actuators Microsyst. Workshop

External Links

Snippet

This paper reports experimental results on a new class of dryreleased, post-CMOS compatible, contour-mode aluminum nitride resonators spanning a frequency range from 23 MHz to 225 MHz showing high quality factors both in vacuum (Qmax= 5,830 at 43.26 MHz) …
Continue reading at transducer-research-foundation.org (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezo-electric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezo-electric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezo-electric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of micro-electro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezo-electric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezo-electric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezo-electric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of micro-electro-mechanical resonators
    • H03H9/02338—Suspension means
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of micro-electro-mechanical resonators
    • H03H9/02433—Means for compensation or elimination of undesired effects
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezo-electric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezo-electric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezo-electric, electrostrictive, or magnetostrictive of micro-electro-mechanical resonators

Similar Documents

Publication Publication Date Title
US7492241B2 (en) Contour-mode piezoelectric micromechanical resonators
US7843284B2 (en) Lithographically defined multi-standard multi-frequency high-Q tunable micromechanical resonators
Piazza et al. Piezoelectric aluminum nitride vibrating contour-mode MEMS resonators
Piazza et al. Dry-released post-CMOS compatible contour-mode aluminum nitride micromechanical resonators for VHF applications
Piazza et al. Low motional resistance ring-shaped contour-mode aluminum nitride piezoelectric micromechanical resonators for UHF applications
US7406761B2 (en) Method of manufacturing vibrating micromechanical structures
Humad et al. High frequency micromechanical piezo-on-silicon block resonators
US20040065940A1 (en) Capacitive resonators and methods of fabrication
Pan et al. Thin-film piezoelectric-on-substrate resonators with Q enhancement and TCF reduction
Pourkamali et al. SOI-based HF and VHF single-crystal silicon resonators with sub-100 nanometer vertical capacitive gaps
WO2022134861A1 (en) Frequency-tunable film bulk acoustic resonator and preparation method therefor
EP1598933B1 (en) Air-gap type thin-film bulk acoustic resonator and fabrication method therefor
Piazza et al. Single-chip multiple-frequency RF microresonators based on aluminum nitride contour-mode and FBAR technologies
Hara et al. MEMS based thin film 2 GHz resonator for CMOS integration
Zhu et al. A Mechanically Coupled Piezoelectric MEMS Filter With Tiny Percent Bandwidth and Low Insertion Loss
Fatemi et al. Very low-loss high frequency lateral-mode resonators on polished ultrananocrystalline diamond
Yan et al. A 1.14 GHz piezoelectrically transduced disk resonator
CN214851161U (en) A Frequency Tunable Thin Film Bulk Acoustic Resonator
Fatemi et al. 50Ω-terminated 900MHz monolithic lateral-extensional piezoelectric filters on ultrananocryslalline diamond
Hung et al. Capacitive-piezo transducers for higher Q contour-mode AlN resonators at 1.2 GHz
Fatemi et al. Low-loss lateral-extensional piezoelectric filters on ultrananocrystalline diamond
Li et al. Piezoelectric Al/sub 0.3/Ga/sub 0.7/As longitudinal mode bar resonators
Yan et al. Single-chip multiple-frequency VHF low-impedance micro piezoelectric resonators
Khine et al. Characterization of SOI Lamé-mode square resonators
Hara et al. Aluminum nitride based thin film bulk acoustic resonator using germanium sacrificial layer etching