[go: up one dir, main page]

Zhang et al., 2019 - Google Patents

Clean transfer of 2D transition metal dichalcogenides using cellulose acetate for atomic resolution characterizations

Zhang et al., 2019

Document ID
11613721177977514905
Author
Zhang T
Fujisawa K
Granzier-Nakajima T
Zhang F
Lin Z
Kahn E
Perea-Lopez N
Elías A
Yeh Y
Terrones M
Publication year
Publication venue
ACS Applied Nano Materials

External Links

Snippet

Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) can be easily synthesized on SiO2/Si substrates by chemical vapor deposition (CVD). However, for practical applications, those 2D crystals usually need to be retrieved and placed onto target …
Continue reading at pubs.acs.org (other versions)

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/04—Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
    • C01B31/0438—Graphene
    • C01B31/0446—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/0206—Nanosized carbon materials
    • C01B31/022—Carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y30/00—Nano-technology for materials or surface science, e.g. nano-composites
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/0206—Nanosized carbon materials
    • C01B31/0293—Other structures, e.g. nano-onions, nano-scrolls, nano-horns, nano-cones or nano-walls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y40/00—Manufacture or treatment of nano-structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Similar Documents

Publication Publication Date Title
Zhang et al. Clean transfer of 2D transition metal dichalcogenides using cellulose acetate for atomic resolution characterizations
Lu et al. Universal transfer and stacking of chemical vapor deposition grown two-dimensional atomic layers with water-soluble polymer mediator
Zhu et al. One-pot selective epitaxial growth of large WS2/MoS2 lateral and vertical heterostructures
Kim et al. Impact of 2D–3D heterointerface on remote epitaxial interaction through graphene
Zhu et al. MoS2–OH bilayer-mediated growth of inch-sized monolayer MoS2 on arbitrary substrates
Aljarb et al. Substrate lattice-guided seed formation controls the orientation of 2D transition-metal dichalcogenides
Li et al. A universal, rapid method for clean transfer of nanostructures onto various substrates
Zhang et al. Considerations for utilizing sodium chloride in epitaxial molybdenum disulfide
Ago et al. Visualization of grain structure and boundaries of polycrystalline graphene and two-dimensional materials by epitaxial growth of transition metal dichalcogenides
Kim et al. Copper-vapor-assisted chemical vapor deposition for high-quality and metal-free single-layer graphene on amorphous SiO2 substrate
Dumcenco et al. Large-area epitaxial monolayer MoS2
Liu et al. Unique domain structure of two-dimensional α-Mo2C superconducting crystals
Sheng et al. Photoluminescence segmentation within individual hexagonal monolayer tungsten disulfide domains grown by chemical vapor deposition
Gurarslan et al. Surface-energy-assisted perfect transfer of centimeter-scale monolayer and few-layer MoS2 films onto arbitrary substrates
Teng et al. Remote catalyzation for direct formation of graphene layers on oxides
Park et al. Large-area monolayer hexagonal boron nitride on Pt foil
Büchner et al. A large-area transferable wide band gap 2D silicon dioxide layer
Deng et al. Graphene wrinkles enable spatially defined chemistry
Verguts et al. Controlling water intercalation is key to a direct graphene transfer
Fan et al. Crack-free growth and transfer of continuous monolayer graphene grown on melted copper
Nguyen et al. Atomically thin epitaxial template for organic crystal growth using graphene with controlled surface wettability
Li et al. Scalable transfer of suspended two-dimensional single crystals
Park et al. Spectroscopic visualization of grain boundaries of monolayer molybdenum disulfide by stacking bilayers
Enrico et al. Ultrafast and resist-free nanopatterning of 2D materials by femtosecond laser irradiation
Gramling et al. Spatially precise transfer of patterned monolayer WS2 and MoS2 with features larger than 104 μm2 directly from multilayer sources