[go: up one dir, main page]

El-Khatib, 2012 - Google Patents

Highly-linearized CMOS distributed bidirectional amplifier with cross-coupled compensator for wireless communications

El-Khatib, 2012

View PDF
Document ID
11841452759989481467
Author
El-Khatib Z
Publication year

External Links

Snippet

A highly-linear transmitter with fully-integrated broadband design linearization capabil ity is required to address linearity improvements. When the input signal driven into the amplifier semiconductor is increased, the output is also increased until a point where dis tortion …
Continue reading at carleton.scholaris.ca (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3247—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using feedback acting on predistortion circuits
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0294—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using vector summing of two or more constant amplitude phase-modulated signals
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45197—Pl types
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits

Similar Documents

Publication Publication Date Title
El-Aassar et al. A DC-to-108-GHz CMOS SOI distributed power amplifier and modulator driver leveraging multi-drive complementary stacked cells
Li et al. Millimeter-wave continuous-mode power amplifier for 5G MIMO applications
Hu et al. A broadband mixed-signal CMOS power amplifier with a hybrid class-G Doherty efficiency enhancement technique
US8848824B2 (en) High efficiency RF system linearizer using controlled complex nonlinear distortion generators
Ning et al. A 30-GHz CMOS SOI outphasing power amplifier with current mode combining for high backoff efficiency and constant envelope operation
Cho et al. Voltage-combined CMOS Doherty power amplifier based on transformer
El-Khatib et al. Distributed CMOS bidirectional amplifiers: broadbanding and linearization techniques
Seo et al. Ultrabroadband linear power amplifier using a frequency-selective analog predistorter
US20120242405A1 (en) Frequency-Desensitizer for Broadband Predistortion Linearizers
Choi et al. Highly linear Ka-band CMOS linear power amplifier using T-shape linearizer with pMOS
Li et al. A highly linear and efficient V-band CMOS power amplifier using hybrid NMOS/PMOS for double nonlinearity cancellation with four-way distributed-active-transformer
Haskins Diode predistortion linearization for power amplifier RFICs in digital radios
El-Khatib Highly-linearized CMOS distributed bidirectional amplifier with cross-coupled compensator for wireless communications
Alngar et al. Capacitive Feedbacked Cold-Phase Compensator Analog Pre-Distorter and PAE Enhancer for K-Band CMOS PAs
Bachi Design and implementation of high efficiency power amplifiers for 5G Applications
Wang et al. A 123-GHz Power Amplifier Utilizing Adaptive Gain and Linearity Compensation Achieving 31.6-dB Gain With 12.05-dBm P sat and 10.18-dBm OP 1 dB
Ning High efficiency mm-wave power amplifier design methodology
Díez-Acereda et al. A Comparative Analysis of Doherty and Outphasing MMIC GaN Power Amplifiers for 5G Applications. Micromachines 2023, 1, 0
Woo et al. Wideband predistortion linearization system for RF power amplifiers using an envelope modulation technique
Samuel Systematic design of a microwave GaN Doherty power amplifier
Im et al. A 1.9‐GHz silicon‐on‐insulator CMOS stacked‐FET power amplifier with uniformly distributed voltage stresses
Kwon et al. High efficiency radio frequency power amplifier with dynamic load modulation for wireless communications
Tan An approach for circuit design optimization based on complexity considerations
Nounyah et al. Design of a Class AB Power Amplifier For 5G Applications
Hünerli Transmitter linearization for mm-wave communications systems