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Geisz et al., 2008 - Google Patents

Inverted GaInP/(In) GaAs/InGaAs triple-junction solar cells with low-stress metamorphic bottom junctions

Geisz et al., 2008

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Document ID
11863587852596130634
Author
Geisz J
Kurtz S
Wanlass M
Ward J
Duda A
Friedman D
Olson J
McMahon W
Moriarty T
Kiehl J
Romero M
Norman A
Jones K
Publication year
Publication venue
2008 33rd IEEE Photovoltaic Specialists Conference

External Links

Snippet

We demonstrate high efficiency performance in two ultra-thin, Ge-free III–V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with …
Continue reading at www.osti.gov (PDF) (other versions)

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