[go: up one dir, main page]

Bai et al., 2016 - Google Patents

Magneto-dielectric and magnetoelectric anisotropies of CoFe 2 O 4/Bi 5 Ti 3 FeO 15 bilayer composite heterostructural films

Bai et al., 2016

Document ID
11836578051287969307
Author
Bai Y
Chen J
Zhao S
Lu Q
Publication year
Publication venue
RSC Advances

External Links

Snippet

Bilayer composite heterostructural films consisting of magnetic CoFe2O4 and multiferroic Bi5Ti3FeO15 films were prepared by the chemical solution deposition method. Morphological, ferroelectric, piezoelectric, magnetic, magneto-dielectric and magnetoelectric …
Continue reading at pubs.rsc.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/16Selection of materials
    • H01L41/18Selection of materials for piezo-electric or electrostrictive devices, e.g. bulk piezo-electric crystals
    • H01L41/187Ceramic compositions, i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/08Piezo-electric or electrostrictive devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/08Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/0072Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity one dimensional, i.e. linear or dendritic nanostructures
    • H01F1/0081Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity one dimensional, i.e. linear or dendritic nanostructures in a non-magnetic matrix, e.g. Fe-nanowires in a nanoporous membrane
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates

Similar Documents

Publication Publication Date Title
Bai et al. Magneto-dielectric and magnetoelectric anisotropies of CoFe 2 O 4/Bi 5 Ti 3 FeO 15 bilayer composite heterostructural films
Ortega et al. Multifunctional magnetoelectric materials for device applications
Chen et al. Multiferroic and magnetoelectric properties of BiFeO3/Bi4Ti3O12 bilayer composite films
Chen et al. Strong magnetoelectric effect of Bi4Ti3O12/Bi5Ti3FeO15 composite films
Prellier et al. The single-phase multiferroic oxides: from bulk to thin film
Gupta et al. Performance of magnetoelectric PZT/Ni multiferroic system for energy harvesting application
Parida et al. Electrical, optical and magneto-electric characteristics of BiBaFeCeO6 electronic system
Tang et al. Magnetoelectric coupling effect in lead-free Bi4Ti3O12/CoFe2O4 composite films derived from chemistry solution deposition
Bai et al. Enhanced multiferroic and magnetoelectric properties of Ho, Mn co-doped Bi5Ti3FeO15 films
Deng et al. 0-3 type magnetoelectric 0.94 Na0. 5Bi0. 5TiO3-0.06 BaTiO3: CoFe2O4 composite ceramics with a deferred thermal depolarization
Abdullah-Al Mamun et al. Structural, electronic, and magnetic analysis and device characterization of ferroelectric–ferromagnetic heterostructure (BZT–BCT/LSMO/LAO) devices for multiferroic applications
Tang et al. Strong magnetoelectric coupling of Aurivillius phase multiferroic composite films with similar layered perovskite structure
Li et al. Multiferroic properties of (1-x) BCZT-xLCMO laminated composites
Sharma et al. Coexistence of two ferroelectric phases and improved room-temperature multiferroic properties in the (0.70) BiFe1− xCoxO3–(0.30) PbTiO3 system
Rajesh et al. Studies on multiferroic properties of single phasic Bi0. 85Ho0. 05Sm0. 1FeO3 ceramics
Bai et al. Magnetoelectric fatigue of Ho-doped Bi 5 Ti 3 FeO 15 films under the action of bipolar electrical cycling
Tang et al. Magnetoelectric effect of lead-free perovskite BiFeO3/Bi0. 5 (Na0. 85K0. 15) 0.5 TiO3 composite films
US7226666B2 (en) Magnetoelectric effects of magnetostrictive and piezoelectric layered composites
Yan et al. Enhanced ferroelectric and dielectric behaviors of PZT/BFO heterostructure via compositional development
Lisnevskaya Lead zirconate titanate/modified nickel ferrite magnetoelectric composites prepared from submicron precursors
Qin et al. A comparative study on the dielectric and multiferroic properties of Co0. 5Zn0. 5Fe2O4/Ba0. 8Sr0. 2TiO3 composite ceramics
Wu et al. Effect of bilayer structure and a SrRuO3 buffer layer on ferroelectric properties of BiFeO3 thin films
Bhattarai et al. Energy density and storage capacity of La3+ and Sc3+ co-substituted Pb (Zr0. 53Ti0. 47) O3 thin films
Guo et al. Ferroelectric, dielectric, ferromagnetic, and magnetoelectric properties of BNF-NZF bilayer nanofilms prepared via sol-gel process
Li et al. Residual Strain-mediated multiferroic properties of Ba0. 85Ca0. 15Zr0. 9Ti0. 1O3/La0. 67Ca0. 33MnO3 epitaxial heterostructures