Bruschini et al., 2018 - Google Patents
Monolithic SPAD arrays for high-performance, time-resolved single-photon imagingBruschini et al., 2018
- Document ID
- 11986940748871131489
- Author
- Bruschini C
- Burri S
- Lindner S
- Ulku A
- Zhang C
- Antolovic I
- Wolf M
- Charbon E
- Publication year
- Publication venue
- 2018 International Conference on Optical MEMS and Nanophotonics (OMN)
External Links
Snippet
SPAD (single-photon avalanche diode) arrays are single-photon sensors, which enable photon counting and unparalleled time-resolved imaging. In this paper, we will detail the architecture and characteristics of three representative SPAD arrays, implemented in …
- 238000003384 imaging method 0 title abstract description 6
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/369—SSIS architecture; Circuitry associated therewith
- H04N5/374—Addressed sensors, e.g. MOS or CMOS sensors
- H04N5/3745—Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N5/37452—Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising additional storage means
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/369—SSIS architecture; Circuitry associated therewith
- H04N5/378—Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems
- H04N3/10—Scanning details of television systems by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/33—Transforming infra-red radiation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems
- H04N3/10—Scanning details of television systems by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/1506—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/351—Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
- H04N5/355—Control of the dynamic range
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/222—Studio circuitry; Studio devices; Studio equipment; Cameras comprising an electronic image sensor, e.g. digital cameras, video cameras, TV cameras, video cameras, camcorders, webcams, camera modules for embedding in other devices, e.g. mobile phones, computers or vehicles
- H04N5/225—Television cameras; Cameras comprising an electronic image sensor, e.g. digital cameras, video cameras, video cameras, camcorders, webcams, camera modules for embedding in other devices, e.g. mobile phones, computers or vehicles
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10348993B2 (en) | Digital readout method and apparatus | |
| Morimoto et al. | 3.2 megapixel 3D-stacked charge focusing SPAD for low-light imaging and depth sensing | |
| AU2018278515A1 (en) | An imaging method and apparatus | |
| US10050168B2 (en) | Back side illuminated image sensor with guard ring region reflecting structure | |
| CN105895645B (en) | Pixel Array and Image Sensing System | |
| Burri et al. | Architecture and applications of a high resolution gated SPAD image sensor | |
| US6268883B1 (en) | High speed infrared imaging system and method | |
| Burri et al. | LinoSPAD: a time-resolved 256x1 CMOS SPAD line sensor system featuring 64 FPGA-based TDC channels running at up to 8.5 giga-events per second | |
| Bruschini et al. | Monolithic SPAD arrays for high-performance, time-resolved single-photon imaging | |
| Seo et al. | 11.2 A 10.8 ps-time-resolution 256× 512 image sensor with 2-Tap true-CDS lock-in pixels for fluorescence lifetime imaging | |
| Bruschini et al. | LinoSPAD2: A 512x1 linear SPAD camera with system-level 135-ps SPTR and a reconfigurable computational engine for time-resolved single-photon imaging | |
| Huang et al. | 32× 64 SPAD imager using 2-bit in-pixel stack-based memory for low-light imaging | |
| Zhu et al. | A review of image sensors used in near-infrared and shortwave infrared fluorescence imaging | |
| El-Desouki et al. | CMOS active-pixel sensor with in-situ memory for ultrahigh-speed imaging | |
| Faramarzpour et al. | CMOS imaging for biomedical applications | |
| JP2013138432A (en) | Array with multiple pixels and pixel information transfer method | |
| Kong et al. | Time-delay-integration imaging implemented with single-photon-avalanche-diode linear array | |
| CN105959597A (en) | TV-type infrared imaging chip based on quantum dot light-emitting detector | |
| Katz et al. | Passive CMOS single photon avalanche diode imager for a gun muzzle flash detection system | |
| Delic et al. | Neuromorphic computing for compact lidar systems | |
| Eminoglu et al. | A 1280× 1024-15µm CTIA ROIC for SWIR FPAs | |
| Ruskowski et al. | 64x48 pixel backside illuminated SPAD detector array for LiDAR applications | |
| Seo et al. | A high performance multi-tap CMOS lock-in pixel image sensor for biomedical applications | |
| Acconcia et al. | Fully integrated high-speed electronics for remote sensing with a large array of single photon avalanche diodes | |
| Madonini et al. | Event-Driven SPAD Array for Quantum-Enhanced Imaging |