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Vadivelu et al., 2013 - Google Patents

633 nm red emissions from InGaN nanocolumn light-emitting diode by radio frequency plasma assisted molecular beam epitaxy

Vadivelu et al., 2013

Document ID
11924411329624770083
Author
Vadivelu R
Igawa Y
Kishino K
Publication year
Publication venue
Japanese Journal of Applied Physics

External Links

Snippet

GaN nanocolumns exhibiting high light-extraction property provide a platform for high- performance nano-devices. To improve the performance of nanocolumn LEDs, uniform arrays of InGaN-based multi quantum well (MQW) nanocolumns were fabricated. We report …
Continue reading at iopscience.iop.org (other versions)

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