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Chang et al., 1999 - Google Patents

Effects of H 2 plasma treatment on low dielectric constant methylsilsesquioxane

Chang et al., 1999

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Document ID
12166264141692343221
Author
Chang T
Liu P
Mei Y
Mor Y
Perng T
Yang Y
Sze S
Publication year
Publication venue
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The quality of organic low-k methylsilsesquioxane (MSQ) film is degraded by the damage of oxygen plasma and hygroscopic behavior during photoresist stripping. In addition, the interaction between MSQ and copper is worth investigating. In this work, we have studied …
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