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Takagi et al., 2002 - Google Patents

Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs

Takagi et al., 2002

Document ID
12350830860632166866
Author
Takagi S
Sugiyama N
Mizuno T
Tezuka T
Kurobe A
Publication year
Publication venue
Materials Science and Engineering: B

External Links

Snippet

Strained-Si CMOS is an attractive device structure to be able to relax several fundamental limitations of CMOS scaling, because of high electron and hole mobility and compatibility with Si CMOS standard processing. In this paper, we present a new device structure …
Continue reading at www.sciencedirect.com (other versions)

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    • H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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