[go: up one dir, main page]

Joshi et al., 1993 - Google Patents

Switching, fatigue, and retention in ferroelectric Bi4Ti3O12 thin films

Joshi et al., 1993

View PDF
Document ID
12735577097979178324
Author
Joshi P
Krupanidhi S
Publication year
Publication venue
Applied physics letters

External Links

Snippet

Thin films of bismuth titanate, Bi4Ti3O12, prepared by the metalorganic solution deposition technique and rapid thermally annealed at 700° C for 20 s have shown good ferroelectric switching, fatigue, and retention characteristics. A switching time of 180 ns was measured for …
Continue reading at pubs.aip.org (PDF) (other versions)

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using optical elements using other beam accessed elements, e.g. electron, ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites

Similar Documents

Publication Publication Date Title
Joshi et al. Switching, fatigue, and retention in ferroelectric Bi4Ti3O12 thin films
Moazzami et al. Electrical characteristics of ferroelectric PZT thin films for DRAM applications
US6762481B2 (en) Electrically programmable nonvolatile variable capacitor
JP4204755B2 (en) Microelectronic device and method for storing information
Beck et al. Reproducible switching effect in thin oxide films for memory applications
Mihara et al. Evaluation of imprint properties in sol-gel ferroelectric Pb (ZrTi) O3 thin-film capacitors
Carrano et al. Electrical and reliability properties of PZT thin films for ULSI DRAM applications
Dat et al. Polycrystalline La0. 5Sr0. 5CoO3/PbZr0. 53Ti0. 47O3/La0. 5Sr0. 5CoO3 ferroelectric capacitors on platinized silicon with no polarization fatigue
Taylor et al. Electrical properties of SrBi2Ta2O9 thin films and their temperature dependence for ferroelectric nonvolatile memory applications
Park et al. Two-step polarization switching mediated by a nonpolar intermediate phase in Hf 0.4 Zr 0.6 O 2 thin films
Joshi et al. Rapid thermally processed ferroelectric Bi4Ti3O12 thin films
Ramesh et al. Fatigue and aging in ferroelectric PbZr0. 2Ti0. 8O3/YBa2Cu3O7 heterostructures
Melnick et al. Recent results on switching, fatigue and electrical characterization of sol-gel based PZT capacitors
Stewart et al. Some optical and electrical switching characteristics of a lead zirconate titanate ferroelectric ceramic
Sadashivan et al. Evaluation of imprint in fully integrated (La, Sr) CoO 3/Pb (Nb, Zr, Ti) O 3/(La, Sr) CoO 3 ferroelectric capacitors
Lee et al. Total-dose radiation effects on sol-gel derived PZT thin films
Shepherd Fatigue and aging in sol-gel derived PZT thin films
Maderic et al. Ferroelectric switching, memory retention and endurance properties of very thin PZT films
McCrory et al. Total ionizing dose effects on TiN/Ti/HfO 2/TiN resistive random access memory studied via electrically detected magnetic resonance
Shimada et al. Retention characteristics of a ferroelectric memory based on SrBi2 (Ta, Nb) 2O9
Moazzami Ferroelectric lead zirconate titanate thin films for semiconductor memory
Fan et al. Structure-property relationships in lead zinc niobate based ferroelectric ceramics
Carrano et al. Electrical and reliability characteristics of lead-zirconate-titanate (PZT) ferroelectric thin films for DRAM applications
Taylor et al. Pulse switching characterization of organometallic chemical vapor deposited PbZrxTi1− xO3 thin films for high-density memory applications
Chen et al. Switching properties of SrBi 2 Ta 2 O 9 thin films produced by metalorganic decomposition