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Alzanki et al., 2004 - Google Patents

Carrier and mobility profiling of ultra-shallow junctions in Sb implanted silicon

Alzanki et al., 2004

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Document ID
13134116262477598015
Author
Alzanki T
Gwilliam R
Emerson N
Sealy B
Publication year
Publication venue
Electronics Letters

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Snippet

Differential Hall effect measurements have been carried out to obtain electron concentration and mobility profiles for 2 keV implants of 1× 1015 Sb+ cm− 2 in〈 100〉 silicon with nanometre resolution. A comparison is made between carrier and atomic profiles …
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