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Wadhwa et al., 2021 - Google Patents

Design and investigation of doped triple metal double gate vertical TFET for performance enhancement

Wadhwa et al., 2021

Document ID
13254503537556338132
Author
Wadhwa G
Singh J
Raj B
Publication year
Publication venue
Silicon

External Links

Snippet

Abstract A Triple-Metal-Gate Vertical Tunnel FET (TMG-VTFET) on the doped silicon body is proposed in this paper. The metal gate is partitioned into three sections in the designed structure, and the work function of the middle section is kept higher as compare to the two …
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