[go: up one dir, main page]

Zhou et al., 2011 - Google Patents

Nanostructure and high thermoelectric performance in nonstoichiometric AgPbSbTe compounds: the role of Ag

Zhou et al., 2011

Document ID
13355795774395065687
Author
Zhou M
Li J
Wang H
Kita T
Li L
Chen Z
Publication year
Publication venue
Journal of electronic materials

External Links

Snippet

High-performance nanostructured Ag1− x Pb22. 5SbTe20 thermoelectric materials have been fabricated using mechanical alloying and spark plasma sintering. A decrease in Ag content causes a great reduction in thermal conductivity and a prominent increase in ZT …
Continue reading at link.springer.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/18—Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth, e.g. AIIIBV compounds
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/16—Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/22—Selection of the material for the legs of the junction using inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen or germanium or silicon, e.g. superconductors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H01L35/32—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermo-couple forming the device including details about, e.g., housing, insulation, geometry, module
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/26—Selection of the material for the legs of the junction using compositions changing continuously or discontinuously inside the material
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/34—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/02—Details
    • H01L39/12—Details characterised by the material

Similar Documents

Publication Publication Date Title
Martin et al. Enhanced Seebeck coefficient through energy-barrier scattering in PbTe nanocomposites
US8865995B2 (en) Methods for high figure-of-merit in nanostructured thermoelectric materials
Xiong et al. High thermoelectric performance of Yb0. 26Co4Sb12/yGaSb nanocomposites originating from scattering electrons of low energy
Yusufu et al. Bottom-up nanostructured bulk silicon: a practical high-efficiency thermoelectric material
Yang et al. Thermoelectrical properties of lutetium-doped Bi2Te3 bulk samples prepared from flower-like nanopowders
Wang et al. High performance n-type (Bi, Sb) 2 (Te, Se) 3 for low temperature thermoelectric generator
Park et al. Thermoelectric energy-conversion characteristics of n-type Bi2 (Te, Se) 3 nanocomposites processed with carbon nanotube dispersion
WO2008140596A2 (en) Methods for high figure-of-merit in nanostructured thermoelectric materials
Di Improving thermoelectric properties of p-type Bi2Te3-based alloys by spark plasma sintering
Kim et al. Enhanced thermoelectric performance through carrier scattering at spherical nanoparticles in Bi0. 5Sb1. 5Te3/Ta2O5 composites
Nagarjuna et al. Grain refinement to improve thermoelectric and mechanical performance in n-type Bi2Te2. 7Se0. 3 alloys
Yu et al. High performance half-Heusler thermoelectric materials with refined grains and nanoscale precipitates
Dou et al. Enhanced thermoelectric performance of BiSbTe-based composites incorporated with amorphous Si 3 N 4 nanoparticles
US8883047B2 (en) Thermoelectric skutterudite compositions and methods for producing the same
Li et al. Thermoelectric properties of indium-added skutterudites In x Co4Sb12
Zhou et al. Nanostructure and high thermoelectric performance in nonstoichiometric AgPbSbTe compounds: the role of Ag
Kuo et al. Thermoelectric properties of fine-grained PbTe bulk materials fabricated by cryomilling and spark plasma sintering
Lei et al. Microwave synthesis combined with SPS sintering to fabricate Pb doped p-type BiCuSeO oxyselenides thermoelectric bulks in a few minutes
Basu et al. Improved Thermoelectric Properties of Se-Doped n-Type PbTe1− x Se x (0≤ x≤ 1)
Li et al. Thermoelectric materials with potential high power factors for electricity generation
Sahoo et al. Nanometer-scale interface engineering boosts the thermoelectric performance of n-type Ti 0.4 Hf 0.6 Ni 1+ z Sn 0.975 Sb 0.025 alloys
Falkenbach et al. Thermoelectric properties of nanostructured bismuth-doped lead telluride Bi x (PbTe) 1− x prepared by co-ball-milling
Vishwakarma et al. Facile synthesis of nanostructured n-type SiGe alloys with enhanced thermoelectric performance using rapid solidification employing melt spinning followed by spark plasma sintering
Usenko et al. Thermoelectric Properties of n-Type Si0, 8Ge0, 2-FeSi2 Multiphase Nanostructures
Yang et al. Lattice thermal conductivity reduction due to in situ-generated nano-phase in Bi0. 4Sb1. 6Te3 alloys by microwave-activated hot pressing