[go: up one dir, main page]

Blackwood et al., 1993 - Google Patents

Electrostrictive behavior in lead magnesium niobate (PMN) actuators. I. Materials perspective

Blackwood et al., 1993

Document ID
13357597725662929531
Author
Blackwood G
Ealey M
Publication year
Publication venue
Smart materials and structures

External Links

Snippet

Abstract Lead magnesium niobate (Pb (Mg 1/3 Nb 2/3) O 3 or PMN) exhibits many attractive properties required by actuators for precision submicron control. At room temperature hysteresis is negligible, thermal expansion is less than 1 microstrain degrees C-1, and the …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/16—Selection of materials
    • H01L41/18—Selection of materials for piezo-electric or electrostrictive devices, e.g. bulk piezo-electric crystals
    • H01L41/187—Ceramic compositions, i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials
    • H01L41/1875—Lead based oxides
    • H01L41/1876—Lead zirconate titanate based
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/08—Piezo-electric or electrostrictive devices
    • H01L41/09—Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators
    • H01L41/0926—Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/02—Details
    • H01L41/04—Details of piezo-electric or electrostrictive devices
    • H01L41/047—Electrodes or electrical connection arrangements
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/22—Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
    • H01L41/35—Forming piezo-electric or electrostrictive materials
    • H01L41/39—Inorganic materials
    • H01L41/43—Inorganic materials by sintering
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/22—Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
    • H01L41/31—Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/22—Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
    • H01L41/35—Forming piezo-electric or electrostrictive materials
    • H01L41/45—Organic materials

Similar Documents

Publication Publication Date Title
Blackwood et al. Electrostrictive behavior in lead magnesium niobate (PMN) actuators. I. Materials perspective
Nomura et al. Electrostrictive effect in Pb (Mg1/3Nb2/3) O3-type materials
Sebald et al. Pyroelectric energy conversion: optimization principles
Gubinyi et al. Electrical properties of PZT piezoelectric ceramic at high temperatures
Griggio et al. Substrate Clamping Effects on Irreversible Domain Wall Dynamics<? format?> in Lead Zirconate Titanate Thin Films
Jordan et al. Piezoelectric ceramics characterization
Kamel et al. Grain size effect on the poling of soft Pb (Zr, Ti) O3 ferroelectric ceramics
Viehland Effect of uniaxial stress upon the electromechanical properties of various piezoelectric ceramics and single crystals
Aramaki et al. Demonstration of high-performance piezoelectric MEMS vibration energy harvester using BiFeO3 film with improved electromechanical coupling factor
Vidal et al. Low-frequency vibration energy harvesting with bidomain LiNbO 3 single crystals
Sun et al. Strain engineering of piezoelectric properties of strontium titanate thin films
Ren et al. Nonlinear strain and DC bias induced piezoelectric behaviour of electrostrictive lead magnesium niobate-lead titanate ceramics under high electric fields
Uchino Relaxor ferroelectric-based ceramics
Kong et al. Fundamentals of ferroelectric materials
Ma Flexoelectricity: strain gradient effects in ferroelectrics
Zhang et al. Superior d32∗ and k32∗ coefficients in 0.955 Pb (Zn1/3Nb2/3) O3–0.045 PbTiO3 and 0.92 Pb (Zn1/3Nb2/3) O3–0.08 PbTiO3 single crystals poled along [011]
You et al. Dielectric relaxation and electromechanical degradation of Gd-doped PMN-29PT ferroelectric ceramics with ultrahigh piezoelectricity
Ducharne et al. A unique fractional derivative operator to simulate all dynamic piezoceramic dielectric manifestations: From aging to frequency-dependent hysteresis
Huang et al. Large stroke high fidelity PZN-PT single-crystal “Stake” actuator
Wongdamnern et al. Comparative studies of dynamic hysteresis responses in hard and soft PZT ceramics
Fang et al. Temperature-dependent Raman spectra and electrical properties of 0.69 Pb (Mg1/3Nb2/3) O3–0.31 PbTiO3 single crystals
Viehland et al. Anelastic relaxation and internal strain in lead magnesium niobate relaxors
Shaoping et al. Electromechanical nonlinearity of ferroelectric ceramics and related non-180° domain wall motions
Chen et al. The low frequency relaxor properties of ferroelectric PZT-4 studied by DMA
Garcia et al. Domain wall contribution to dielectric and piezoelectric responses in 0.65 Pb (Mg1/3Nb2/3)–0.35 PbTiO3 ferroelectric ceramics