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Liu et al., 2012 - Google Patents

$\hbox {MoS} _ {2} $ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox {Al} _ {2}\hbox {O} _ {3} $ as Top-Gate Dielectric

Liu et al., 2012

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Document ID
13716810971800784269
Author
Liu H
Peide D
Publication year
Publication venue
IEEE electron device letters

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Snippet

We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer- structured molybdenum disulfide (MoS 2) crystals and MoS 2 dual-gate n-channel MOSFETs with ALD Al 2 O 3 as the gate dielectric. Our CV study of MOSFET structures shows good …
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