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Li et al., 2012 - Google Patents

Vertically aligned carbon nanotube field-effect transistors

Li et al., 2012

Document ID
14157848045638661625
Author
Li J
Zhao C
Wang Q
Zhang Q
Wang Z
Zhang X
Abutaha A
Alshareef H
Publication year
Publication venue
Carbon

External Links

Snippet

Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed on the sidewall of the …
Continue reading at www.sciencedirect.com (other versions)

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