Yang et al., 2025 - Google Patents
Spin‐coating fabrication of high‐yield and uniform organic thin‐film transistors via a primer template growthYang et al., 2025
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- 14205058153689023338
- Author
- Yang Z
- Su J
- Wang J
- Li X
- Li F
- Hu J
- Chen N
- Tao Z
- Yang D
- Wang D
- Zhu Q
- Liao Y
- Lu Z
- Publication year
- Publication venue
- Aggregate
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Solution coating of organic semiconductors offers great potential for achieving low‐cost and high‐throughput manufacturing of large‐area and flexible electronics. However, the solution processability of semiconducting small molecules for fabricating uniform and reliable thin …
- 238000004519 manufacturing process 0 title abstract description 29
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
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- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
- H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
- H01L51/0545—Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
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- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/005—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
- H01L51/0052—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/005—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
- H01L51/0062—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene aromatic compounds comprising a hetero atom, e.g.: N,P,S
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L51/0001—Processes specially adapted for the manufacture or treatment of devices or of parts thereof
- H01L51/0002—Deposition of organic semiconductor materials on a substrate
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- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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