Shobert, 2003 - Google Patents
Recent advances in sliding contacts including space applicationsShobert, 2003
- Document ID
- 14566353468436917087
- Author
- Shobert E
- Publication year
- Publication venue
- IEEE Transactions on Parts, Materials and Packaging
External Links
Snippet
Drastic wear under very dry high altitude or space conditions is considered to be due to a lack of a contact film. When this film is absent, electron exchange between metallic members can produce metallic bonds which are of the same order of magnitude in strength as those of …
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1602—Diamond
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7786393B2 (en) | Coating of Mn+1AXn material for electrical contact elements | |
| Fares et al. | Temperature-dependent electrical characteristics of β-Ga2O3 diodes with W Schottky contacts up to 500° C | |
| Holm | Electric contacts: theory and application | |
| Hetzer et al. | Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries | |
| Williams | Electrical properties of hard materials | |
| Holm et al. | Elektrische Kontakte/Electric Contacts Handbook | |
| EP1234315B1 (en) | A contact element and a contact arrangement | |
| Shobert | Recent advances in sliding contacts including space applications | |
| Hara et al. | Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC | |
| Nishida et al. | Metal-insulator transition in the amorphous Si1− xAux system with a strong spin-orbit interaction | |
| Danks | Tribology of electrical contacts | |
| Braunović et al. | Power connections | |
| Johnson et al. | High current brushes: VIII: Effect of electrical load | |
| Seok et al. | High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates | |
| Holm | Contribution to the Theory of the Contact between a Carbon Brush and a Copper Collector Ring | |
| Doi et al. | Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion | |
| EP4089697B1 (en) | Metal-graphene coated electrical contact | |
| Lewis et al. | Friction, wear, and noise of slip ring and brush contacts for synchronous satellite use | |
| Ervin et al. | Approach to optimizing n-SiC Ohmic contacts by replacing the original contacts with a second metal | |
| Doi et al. | Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height | |
| Amada et al. | Effects of lubricant oil on sliding contact phenomena in carbon brush-slip ring system | |
| Shinozaki et al. | Upward curvature of the temperature dependence of upper critical magnetic field perpendicular to superconducting aluminum films | |
| Spayth et al. | Sliding contacts—A review of the literature | |
| Przybyszewski | A Review of Lubrication of Sliding-and Rolling-element Electrical Contracts in Vacuum | |
| Song et al. | Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power SBDs |