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Li et al., 2002 - Google Patents

Accurate and computationally efficient analytical 1-d and 2-d ion implantation models based on Legendre polynomials

Li et al., 2002

Document ID
1453373899954507171
Author
Li D
Shrivastav G
Wang G
Chen Y
Lin L
Oak S
Tasch A
Banerjee S
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

Computationally efficient ion implantation modeling has become the essential tool for efficient and accurate CMOS design as aggressive scaling of devices continues. Specifically, computationally efficient two-dimensional (2-D) analytical models are often …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
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    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
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    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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