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Sreelekshmi et al., 2025 - Google Patents

Recessed p-GaN Gate MIS-HEMT with AlN Interlayer and Buried p-GaN Layer

Sreelekshmi et al., 2025

Document ID
1466931316618636366
Author
Sreelekshmi P
Jacob J
Publication year
Publication venue
Semiconductors

External Links

Snippet

Herein, the design of a normally off p-GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) comprising a recessed p-GaN gate and a buried p-GaN back barrier layer is reported. The proposed structure is capable to minimize the trade-off …
Continue reading at link.springer.com (other versions)

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