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Noh et al., 2011 - Google Patents

Controlling contact resistance in top-gate polythiophene-based field-effect transistors by molecular engineering

Noh et al., 2011

Document ID
14686625205156003987
Author
Noh Y
Cheng X
Tello M
Lee M
Sirringhaus H
Publication year
Publication venue
Semiconductor science and technology

External Links

Snippet

We report on an effective control of source–drain contact resistance by insertion of a self- assembled monolayer at the metal/semiconductor interface in top-gate staggered polymer field-effect transistors fabricated with poly (2, 5-bis (3-tetradecylthiophene-2-yl) thieno [3, 2 …
Continue reading at iopscience.iop.org (other versions)

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