[go: up one dir, main page]

Singh et al., 2022 - Google Patents

Chalcogenide GeTe-based non-volatile switched K-band tunable reflective load for reconfigurable RF circuits

Singh et al., 2022

Document ID
1482952426700803986
Author
Singh T
Mansour R
Publication year
Publication venue
2022 IEEE/MTT-S International Microwave Symposium-IMS 2022

External Links

Snippet

This paper reports the design and fabrication of a monolithically integrated tunable reflective load. The device is optimized to operate in K-Band and developed utilizing phase change material (PCM) germanium telluride (GeTe) to gain switching functionality. The proposed …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/12—Auxiliary devices for switching or interrupting by mechanical chopper
    • H01P1/127—Strip line switches
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H01P1/185—Phase-shifters using a diode or a gas filled discharge tube
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H01P1/19—Phase-shifters using a ferromagnetic device
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/215—Frequency-selective devices, e.g. filters using ferromagnetic material
    • H01P1/217—Frequency-selective devices, e.g. filters using ferromagnetic material the ferromagnetic material acting as a tuning element in resonators
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/203—Strip line filters
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices using field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P9/00—Delay lines of the waveguide type

Similar Documents

Publication Publication Date Title
Singh et al. Loss compensated PCM GeTe-based latching wideband 3-bit switched true-time-delay phase shifters for mmWave phased arrays
Singh et al. Miniaturized DC–60 GHz RF PCM GeTe-based monolithically integrated redundancy switch matrix using T-type switching unit cells
Singh et al. Miniaturized reconfigurable 28 GHz PCM-based 4-bit latching variable attenuator for 5G mmWave applications
Singh et al. Reconfigurable PCM GeTe-based latching 6-bit digital switched capacitor bank
Hillman et al. An ultra-low loss millimeter-wave solid state switch technology based on the metal-insulator-transition of vanadium dioxide
Singh et al. Compact 26–30 GHz reflection-type phase shifter with 8-bit switched phase tuning utilizing chalcogenide phase-change switches
CN101202369A (en) A miniaturized MEMS switch line phase shifter
Bettoumi et al. Phase change material (PCM) RF switches with integrated decoupling bias circuit
Singh et al. A miniaturized monolithic PCM based scalable four-port RF switch unit-cell
Baltimas et al. A 25–50 GHz phase change material (PCM) 5-bit true time delay phase shifter in a production SiGe BiCMOS process
Singh et al. Scalable mmWave non-volatile phase change GeTe-based compact monolithically integrated wideband digital switched attenuator
Singh et al. Monolithic PCM based miniaturized T-type RF switch for millimeter wave redundancy switch matrix applications
Singh Monolithically integrated phase change material GeTe-based RF components for millimeter wave applications
Mercier et al. Miniature RF MEMS switched capacitors
Xu et al. Conductive bridging-based memristive RF switches on a silicon substrate
Singh et al. Chalcogenide GeTe-based non-volatile switched K-band tunable reflective load for reconfigurable RF circuits
Amin et al. Wideband SPDT and SP4T RF switches using phase-change material in a SiGe BiCMOS process
Singh et al. Scalable non-volatile chalcogenide phase change GeTe-based monolithically integrated mmWave crossbar switch matrix
Blondy et al. Optimized PCM switches and capacitors: Basic building blocks for RF and microwave subsystems
Casu et al. Tunable rf phase shifters based on vanadium dioxide metal insulator transition
Ghalem et al. Arrays of GeTe electrically activated RF switches
Shen et al. Broadband low actuation voltage RF MEM switches
Williamson et al. A 10–50 GHz Ultrawideband Low Loss mmWave VO 2 Based Phase Shifter for Passive Scanning Arrays
Singh et al. Symmetrical multiport mmWave chalcogenide phase-change RF switches
Singh et al. Miniaturized 6-Bit Phase-Change Capacitor Bank with Improved Self-Resonance Frequency and $ Q$