Ohta et al., 2000 - Google Patents
Pulse-modulated vision chips with versatile-interconnected pixelsOhta et al., 2000
View PDF- Document ID
- 14954344932922731041
- Author
- Ohta J
- Uehara A
- Tokuda T
- Nunoshita M
- Publication year
- Publication venue
- International Parallel and Distributed Processing Symposium
External Links
Snippet
This paper proposes and demonstrates novel types of vision chips that utilize pulse trains for image processing. Two types of chips were designed using 1.2 (µm double-metal double- poly CMOS process; one is based on a pulse width modulation (PWM) and the other is …
- 230000000051 modifying 0 abstract description 17
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems
- H04N3/10—Scanning details of television systems by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/369—SSIS architecture; Circuitry associated therewith
- H04N5/378—Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/369—SSIS architecture; Circuitry associated therewith
- H04N5/374—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5708263A (en) | Photodetector array | |
| US6512547B1 (en) | Solid-state imaging device and method of detecting optical signals using the same | |
| Decker et al. | A 256/spl times/256 CMOS imaging array with wide dynamic range pixels and column-parallel digital output | |
| Han et al. | A time-of-flight range image sensor with background canceling lock-in pixels based on lateral electric field charge modulation | |
| JP2976242B2 (en) | Integrated circuit, camera using the integrated circuit, and method for detecting incident light incident on an image sensor manufactured using the integrated circuit technology | |
| US20020020863A1 (en) | CMOS active pixel for improving sensitivity | |
| Jendernalik et al. | An analog sub-miliwatt CMOS image sensor with pixel-level convolution processing | |
| US5939742A (en) | Field-effect photo-transistor | |
| Berner et al. | Event-based pixel sensitive to changes of color and brightness | |
| GB2249430A (en) | A solid state imaging device | |
| US6831691B1 (en) | Solid-state image pickup device | |
| Kramer et al. | Industrial CMOS technology for the integration of optical metrology systems (photo-ASICs) | |
| Tu et al. | CMOS active pixel image sensor with combined linear and logarithmic mode operation | |
| Gomez-Merchan et al. | A self-powered asynchronous image sensor with TFS operation | |
| Kagawa et al. | Pulse-domain digital image processing for vision chips employing low-voltage operation in deep-submicrometer technologies | |
| Ohta et al. | Pulse-modulated vision chips with versatile-interconnected pixels | |
| US6657664B2 (en) | Solid-state image pickup device | |
| JP4300654B2 (en) | Solid-state imaging device | |
| Tabet | Double sampling techniques for CMOS image sensors | |
| KR100829383B1 (en) | CMOS image sensor | |
| Tsai et al. | A time-delay-integration CMOS readout circuit for IR scanning | |
| US7675562B2 (en) | CMOS image sensor including column driver circuits and method for sensing an image using the same | |
| KR100373342B1 (en) | Image sensor capable of preventing flowing backward of charge | |
| Kagawa et al. | A low-voltage PWM CMOS imager with small pixel size using an in-pixel gate-common comparator | |
| US6712506B2 (en) | Reader for electromagnetic radiation detection element, sensor, and the corresponding read process |