[go: up one dir, main page]

Rahman, 2021 - Google Patents

Lattice scale inspection of semiconductor interfaces via non-destructive camera-less 3D T-ray imaging

Rahman, 2021

View PDF
Document ID
14965491191600844197
Author
Rahman A
Publication year
Publication venue
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

External Links

Snippet

Interfaces play critical roles in all semiconductor fabrication processes and on the electronic properties of semiconductors. Especially, devices involving plurality of interfaces is now of paramount importance. As such the interfaces have been a subject of intensive studies …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by transmitting the radiation through the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/23—Bi-refringence
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers

Similar Documents

Publication Publication Date Title
US7558371B2 (en) Method of generating X-ray diffraction data for integral detection of twin defects in super-hetero-epitaxial materials
Béché et al. Improved precision in strain measurement using nanobeam electron diffraction
Vilalta-Clemente et al. Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films
Taraci et al. Strain mapping in nanowires
Naresh-Kumar et al. Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction
Chung et al. Practical and reproducible mapping of strains in Si devices using geometric phase analysis of annular dark-field images from scanning transmission electron microscopy
Li et al. Atomic‐scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy
Zhu et al. Application of digital phase shifting moiré method in interface and dislocation location recognition and real strain characterization from HRTEM images
Beggiato et al. Detection of crystalline defects in Si/SiGe superlattices towards 3D-DRAM applications
Rahman Lattice scale inspection of semiconductor interfaces via non-destructive camera-less 3D T-ray imaging
Kazmerski Atomic-level imaging and microanalysis of grain boundaries in polycrystalline semiconductors
Tao et al. Non-destructive evaluation of residual stresses in thin films via x-ray diffraction topography methods
Zhao et al. Strain status of epitaxial Ge film on a Si (001) substrate
Döscher et al. In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si (100)
Celii et al. In situ detection of InGaAs strained‐layer relaxation by laser light scattering
Zhao et al. High-precision X-ray characterization for basic materials in modern high-end integrated circuit
Dong et al. A dissociated 60° dislocation and its strain fields near a Ge/Si heterostructure interface
Lee et al. Reciprocal-space analysis of compositional modulation in short-period superlattices using position-sensitive x-ray detection
Tillmann et al. Quantitative HRTEM analysis of semiconductor quantum dots
Yamamoto Assessment of stacking faults in silicon carbide crystals
Cullis et al. Microscopy of Semiconducting Materials 2003
Rahman Critical inspection of semiconductor interfaces via camera-less terahertz 3D imaging
Rahman Intricate stress pattern in GaN epi wafers visualized and quantified by cameraless T-ray imaging and pump-probe reflectance spectroscopy
Fodchuk et al. Defect structure of high-resistance CdTe: Cl single crystals and MoOx/CdTe: Cl/MoOx heterostructures according to the data of high-resolution X-ray diffractometry
Boguski et al. Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern