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Zhu et al., 2014 - Google Patents

Atomic layer deposited Al2O3 films for anti-reflectance and surface passivation applications

Zhu et al., 2014

Document ID
15364074230319832817
Author
Zhu L
Liu Y
Zhang H
Xiao H
Guo L
Publication year
Publication venue
Applied Surface Science

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Snippet

Al 2 O 3 films were deposited on n-type crystalline Si (c-Si) wafers by atomic layer deposition using Al (CH 3) 3 and H 2 O as precursors. Surface anti-reflectance and passivation performances were investigated. Average reflectances between 2.8 and 4.2% were …
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