[go: up one dir, main page]

Sadler et al., 1997 - Google Patents

Response of silicon carbide to high-intensity laser irradiation in a high-pressure inert gas atmosphere

Sadler et al., 1997

View PDF
Document ID
15691326581739814947
Author
Sadler L
Shamsuzzoha M
Publication year
Publication venue
Journal of materials research

External Links

Snippet

α–SiC (hexagonal) pressed powder targets were heated with a highly focused beam of CO2 laser radiation to temperatures in excess of 3200° C in an oxygen-and water-free argon atmosphere. The argon pressure was maintained at greater than 100 atm to prevent …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof

Similar Documents

Publication Publication Date Title
Suri et al. Synthesis and consolidation of boron carbide: a review
US5874684A (en) Nanocrystalline materials
Abell et al. An investigation of phase stability in the Y2O3-Al2O3 system
CA1076611A (en) Si3n4 formed by nitridation of sintered silicon compact containing boron
El-Eskandarany Synthesis of nanocrystalline titanium carbide alloy powders by mechanical solid state reaction
Potanin et al. Oxidation of HfB2–SiC ceramics under static and dynamic conditions
US6967011B1 (en) Method for synthesizing extremely high-temperature melting materials
Sadler et al. Response of silicon carbide to high-intensity laser irradiation in a high-pressure inert gas atmosphere
US20220324019A1 (en) Article including silicon carbide and method of manufacturing same
Nassau et al. Rapidly quenched Bi-containing high Tc superconducting oxide compositions
US4729973A (en) Process for producing ceramic composites from microcomposite particles having dispersed fibrous microstructures and the product thereof
Ohyanagi et al. Synthesis of aluminum nitride–silicon carbide solid solutions by combustion nitridation
Kamino et al. High resolution electron microscopy in situ observation of dynamic behavior of grain boundaries and interfaces at very high temperatures
Zhang et al. Effect of rare-earth oxide (CeO2) on the microstructures in laser melted layer
Noma et al. Formation of diffusionlessly transformed tetragonal phases in rapid quenching of ZrO2-Y2O3 melts
El-Eskandarany et al. Morphological and structural studies of mechanically alloyed Ti44C56 powders
Christian Advancing fracture behavior of boron carbide with arc melt processing
WANG et al. Synthesis of Al8B4C7 and its oxidation properties in air
El-Eskandarany et al. Morphological and structural studies of amorphous Fe74Cr18Ni8 alloy prepared by the rod-milling technique
Etzold The addition of silicon to boron carbide by high temperature diffusion coupling for analysis of changes in mechanical properties
RU2533624C1 (en) METHOD FOR OBTAINING THERMOELECTRIC MATERIAL OF n-TYPE BASED ON Mg2Si1-xSnx TRIPLE SOLID SOLUTIONS
Wang et al. Synthesis and photoluminescence of amorphous silicon oxycarbide nanowires
Lim et al. Surface Breakaway Decomposition of Perovskite 0.91 PZN–0.09 PT during High‐Temperature Annealing
Granier et al. Carbide phases synthesised from C/Mo powder compacts at specified sub-stoichiometric ratios by solar radiation heating to temperatures between 1600 C and 2500 C
Maksimov et al. Production of optical Yb3+: Lu2O3 ceramic by spark plasma sintering