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Liehr et al., 1988 - Google Patents

Stacking‐fault‐induced defect creation in SiO2 on Si (100)

Liehr et al., 1988

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Document ID
15811200837483691674
Author
Liehr M
Bronner G
Lewis J
Publication year
Publication venue
Applied physics letters

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Snippet

Decomposition of SiO2 films on Si (100) during ultrahigh‐vacuum anneal has been shown previously to be preceded, at low anneal temperatures, by electrical defect creation in metal‐ oxide‐semiconductor structures. In this letter, the presence of stacking faults in a Si substrate …
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