[go: up one dir, main page]

Sidorov, 2002 - Google Patents

Marriage Of Focused and Broad Ion Beam: Sample Preparation Optimized for High Performance Analytical (S) TEM

Sidorov, 2002

View PDF
Document ID
16070367578552344191
Author
Sidorov M
Publication year
Publication venue
Microscopy and Microanalysis

External Links

Snippet

Since introduction [1], FIB systems are progressively more used for TEM sample preparation. The advantages of FIB over more conventional methods include: high throughput, high precision, less preferential thinning and large electron transparent areas with near parallel …
Continue reading at scholar.archive.org (PDF) (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a micro-scale
    • H01J2237/3174Etching microareas
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2813Scanning microscopes characterised by the application
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2802Transmission microscopes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261Details
    • H01J37/265Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/08Ion sources
    • H01J2237/0802Field ionization sources
    • H01J2237/0807Gas field ion sources [GFIS]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/022Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/2602Details
    • H01J2237/2605Details operating at elevated pressures, e.g. atmosphere
    • H01J2237/2608Details operating at elevated pressures, e.g. atmosphere with environmental specimen chamber
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/20Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/02Devices for withdrawing samples
    • G01N1/04Devices for withdrawing samples in the solid state, e.g. by cutting

Similar Documents

Publication Publication Date Title
US8168948B2 (en) Method of machining a work piece with a focused particle beam
Giannuzzi et al. A review of focused ion beam milling techniques for TEM specimen preparation
EP2600380B1 (en) Inductively coupled plasma source as an electron beam source for spectroscopic analysis
Ishitani et al. Improvements in performance of focused ion beam cross-sectioning: aspects of ion-sample interaction
US6777674B2 (en) Method for manipulating microscopic particles and analyzing
Delobbe et al. High speed TEM sample preparation by Xe FIB
US11735404B2 (en) Method, device and system for the treatment of biological cryogenic samples by plasma focused ion beams
Lee et al. Improved ion imaging of slowly dried neurons and skin cells by graphene cover in time-of-flight secondary ion mass spectrometry
US5563412A (en) Method of making specimens for an electron microscope
Li Advanced techniques in TEM specimen preparation
Sidorov Marriage Of Focused and Broad Ion Beam: Sample Preparation Optimized for High Performance Analytical (S) TEM
Van Leer et al. Ar+ FIB milling and measurement of FIB damage in silicon
YoungáLee et al. Preparation of cellular samples using graphene cover and air-plasma treatment for time-of-flight secondary ion mass spectrometry imaging
Ishitani et al. Proposals for exact-point transmission-electron microscopy using focused ion beam specimen-preparation technique
EP3477682B1 (en) Improved sims secondary ion mass spectrometry technique
Scott et al. Sample preparation for nanoanalytical electron microscopy using the FIB lift-out method and low energy ion milling
JP2006139917A (en) Ion beam processing apparatus and sample preparation method
CN115901815A (en) Method and system for element mapping
US20160042914A1 (en) Achromatic dual-fib instrument for microfabrication and microanalysis
Bonifacio et al. Developments in sample preparation of advanced semiconductor devices from the bulk to nanometer-length scales
JP2000046770A (en) Elemental analysis method
Altmann et al. Advanced FIB sample preparation for high performance TEM analysis
MoberlyChan et al. Cryo-FIB for thinning cryo-TEM samples and evading ice during cryo-transfer
Pogorelov et al. The use of ToF-SIMS for analysis of bioorganic samples
Iwanami et al. Handling of the ice protective film for potential use in the 3D microscale analysis of biological samples