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Fredeman et al., 2015 - Google Patents

17.4 A 14nm 1.1 Mb embedded DRAM macro with 1ns access

Fredeman et al., 2015

Document ID
16596940194815011983
Author
Fredeman G
Plass D
Mathews A
Reyer K
Knips T
Miller T
Gerhard E
Kannambadi D
Paone C
Lee D
Rainey D
Sperling M
Whalen M
Burns S
Publication year
Publication venue
2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of Technical Papers

External Links

Snippet

IBM introduced trench capacitor eDRAM into its high performance microprocessors beginning with 45nm and Power 7 [1] to provide a higher density cache without chip crossings. Whereas the 45 and 32nm designs employ a micro sense amplifier [2] and three …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

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    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
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    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write (R-W) circuits
    • G11C11/4094—Bit-line management or control circuits
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    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write (R-W) circuits
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
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    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
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    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
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