Kotekar-Patil et al., 2019 - Google Patents
Coulomb blockade in etched single-and few-layer MoS2 nanoribbonsKotekar-Patil et al., 2019
View PDF- Document ID
- 16973566171374371502
- Author
- Kotekar-Patil D
- Deng J
- Wong S
- Goh K
- Publication year
- Publication venue
- ACS Applied Electronic Materials
External Links
Snippet
Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present low- temperature electron transport through etched 50–70 nm MoS2 nanoribbons showing …
- CWQXQMHSOZUFJS-UHFFFAOYSA-N Molybdenum disulfide 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S=[Mo]=S 0 title abstract description 180
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| Kotekar-Patil et al. | Coulomb blockade in etched single-and few-layer MoS2 nanoribbons | |
| Wu et al. | State-of-the-art graphene high-frequency electronics | |
| Guo et al. | Study on the resistance distribution at the contact between molybdenum disulfide and metals | |
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| Nguyen et al. | Atomically precise PdSe2 pentagonal nanoribbons | |
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| Park et al. | Band structure engineering of layered WSe2 via one-step chemical functionalization | |
| Lee et al. | Schottky barrier variable graphene/multilayer-MoS2 heterojunction transistor used to overcome short channel effects | |
| Guros et al. | Reproducible performance improvements to monolayer MoS2 transistors through exposed material forming gas annealing | |
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