Callegari et al., 2007 - Google Patents
Spontaneous growth of uniformly distributed In nanodots and InI3 nanowires on InP induced by a focused ion beamCallegari et al., 2007
View PDF- Document ID
- 1711757303053510498
- Author
- Callegari V
- Nellen P
- Publication year
- Publication venue
- physica status solidi (a)
External Links
Snippet
We show the growth of hemispherical In nanodots due to differential sputtering by 30 keV gallium (Ga+) ions and of InI3 nanodots and nanowires due to chemical reactions with iodine on the surface of focused ion beam‐irradiated areas on a (100) InP substrate. Growth …
- 239000002070 nanowire 0 title abstract description 13
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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