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Johansson et al., 2014 - Google Patents

High-frequency gate-all-around vertical InAs nanowire MOSFETs on Si substrates

Johansson et al., 2014

Document ID
17122486467575781601
Author
Johansson S
Memisevic E
Wernersson L
Lind E
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

We demonstrate a vertical InAs nanowire MOSFET integrated on Si substrate with an extrinsic peak cut-off frequency of 103 GHz and a maximum oscillation frequency of 155 GHz. The transistor has a transconductance of 730 mS/mm and is based on arrays of …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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