Ting et al., 2010 - Google Patents
Antimonide-based barrier infrared detectorsTing et al., 2010
- Document ID
- 17511689577668435641
- Author
- Ting D
- Hill C
- Soibel A
- Nguyen J
- Keo S
- Lee M
- Mumolo J
- Liu J
- Gunapala S
- Publication year
- Publication venue
- Infrared Technology and Applications XXXVI
External Links
Snippet
The nearly lattice-matched InAs/GaSb/AlSb (antimonide) material system offers tremendous flexibility in realizing high-performance infrared detectors. Antimonide-based alloy and superlattice infrared absorbers can be customized to have cutoff wavelengths ranging from …
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony 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 [Sb] 0 title abstract description 32
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
- H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
- H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
- H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
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