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Dogmus et al., 2015 - Google Patents

High structural quality InGaN/GaN multiple quantum well solar cells

Dogmus et al., 2015

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Document ID
17535175515728391095
Author
Dogmus E
Zegaoui M
Largeau L
Tchernycheva M
Neplokh V
Weiszer S
Schuster F
Stutzmann M
Foldyna M
Medjdoub F
Publication year
Publication venue
physica status solidi (c)

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In this paper, we report on high structural quality of above 15% indium content InGaN/GaN multiple quantum well (MQW) structures with high equivalent thickness for solar cell applications. The structural and optical characterizations revealed fully strained 25 pairs of …
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