[go: up one dir, main page]

Heiß et al., 2016 - Google Patents

New methodology for on-chip RF reliability assessment

Heiß et al., 2016

Document ID
17808392166286975064
Author
Heiß L
Lachmann A
Schwab R
Panagopoulos G
Baumgartner P
Virupakshappaa M
Schmitt-Landsiedel D
Publication year
Publication venue
2016 IEEE International Reliability Physics Symposium (IRPS)

External Links

Snippet

This work presents a systematic approach to investigate transistor reliability at high frequencies with on-chip stress circuits. The problem of state-of-the art on-chip stress circuits is that the actual stress signal at the device cannot be verified by measurements. However …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/31718Logistic aspects, e.g. binning, selection, sorting of devices under test, tester/handler interaction networks, Test management software, e.g. software for test statistics or test evaluation, yield analysis
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/286External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2868Complete testing stations; systems; procedures; software aspects
    • G01R31/287Procedures; Software aspects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/3181Functional testing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30Marginal testing, e.g. varying supply voltage
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832Specific tests of electronic circuits not provided for elsewhere
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits

Similar Documents

Publication Publication Date Title
Keane et al. An all-in-one silicon odometer for separately monitoring HCI, BTI, and TDDB
Kaczer et al. NBTI from the perspective of defect states with widely distributed time scales
Gielen et al. Emerging yield and reliability challenges in nanometer CMOS technologies
US8692571B2 (en) Apparatus and method for measuring degradation of CMOS VLSI elements
Young et al. Ultra-short pulse current–voltage characterization of the intrinsic characteristics of high-κ devices
Federspiel et al. Interaction between BTI and HCI degradation in High-K devices
Kaczer et al. Maximizing reliable performance of advanced CMOS circuits—A case study
Xiao et al. Hot-carrier and soft-breakdown effects on VCO performance
Sasse et al. MOSFET degradation under RF stress
Babaie et al. A study of RF oscillator reliability in nanoscale CMOS
Heiß et al. New methodology for on-chip RF reliability assessment
Liu et al. New observations on the random telegraph noise induced Vth variation in nano-scale MOSFETs
Rao et al. Study of RF reliability of GaN HEMTs using low-frequency noise spectroscopy
Chang et al. In-field recovery of RF circuits from wearout based performance degradation
Chang et al. Reliability enhancement using in-field monitoring and recovery for RF circuits
Chang et al. Approximating the age of RF/analog circuits through re-characterization and statistical estimation
Ramazanoglu et al. Nanoscale CMOS ring oscillators for statistical characterization of random telegraph noise
Yang et al. Impact of stress acceleration on mixed-signal gate oxide lifetime
Afacan et al. Semi-empirical aging model development via accelerated aging test
Chouard et al. An analog perspective on device reliability in 32nm high-κ metal gate technology
Yu et al. CMOS Device and Circuit Degradations Subject to $\hbox {HfO} _ {2} $ Gate Breakdown and Transient Charge-Trapping Effect
Oshima et al. Impact of random telegraph noise on ring oscillators evaluated by circuit-level simulations
Shin et al. High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics
Chen et al. Entire bias space statistical reliability simulation by 3D-KMC method and its application to the reliability assessment of nanosheet FETs based circuits
Ju et al. Response of switching hole traps in the small-area P-MOSFET under channel hot-hole effect