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Niclass et al., 2007 - Google Patents

A 130-nm CMOS single-photon avalanche diode

Niclass et al., 2007

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Document ID
18361883010467678939
Author
Niclass C
Gersbach M
Henderson R
Grant L
Charbon E
Publication year
Publication venue
Optoelectronic Devices: Physics, Fabrication, and Application IV

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The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ …
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