[go: up one dir, main page]

Elad, 2007 - Google Patents

Drain feedback-a novel feedback technique for low-noise cryogenic preamplifiers

Elad, 2007

Document ID
18389948270859667350
Author
Elad E
Publication year
Publication venue
IEEE Transactions on Nuclear Science

External Links

Snippet

This paper describes a novel technique of charge restoration-the drain feedback, based on the characteristics of the gate-to-drain junction of the input FET. The restoration charge required at the input of the preamplifier is generated by impact ionization in high-field …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/247—Detector read-out circuitry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/185—Measuring radiation intensity with ionisation chamber arrangements
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/02—Dosimeters
    • G01T1/026—Semiconductor dose-rate meters
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light

Similar Documents

Publication Publication Date Title
Elad Drain feedback-a novel feedback technique for low-noise cryogenic preamplifiers
US7339175B1 (en) Feedback circuit for output control in a semiconductor X-ray detector
US8729486B2 (en) MODFET active pixel X-ray detector
Goulding et al. Ballistic deficit correction in semiconductor detector spectrometers
Phipps et al. A HEMT-based cryogenic charge amplifier with sub-100 eVee ionization resolution for massive semiconductor dark matter detectors
Lioliou et al. 4H-SiC Schottky diode arrays for X-ray detection
Lioliou et al. High temperature GaAs X-ray detectors
Raja et al. Spectroscopic performance studies of 4H-SiC detectors for fusion alpha-particle diagnostics
Lioliou et al. Temperature dependent characterization of gallium arsenide X-ray mesa pin photodiodes
Ikagawa et al. Performance of large-area avalanche photodiode for low-energy X-rays and γ-rays scintillation detection
Fiorini et al. Continuous charge restoration in semiconductor detectors by means of the gate-to-drain current of the integrated front-end JFET
Auckloo et al. Al0. 52In0. 48P avalanche photodiodes for soft X-ray spectroscopy
JP4448484B2 (en) Circuit, detection device and method for correcting rate dependent changes in conversion coefficient of detection device
Barnett et al. Characterization of room temperature AlGaAs soft X-ray mesa photodiodes
Lioliou et al. 4H-SiC Schottky diodes with Ni2Si contacts for X-ray detection
Sammartini et al. X–ᵞ-Ray Spectroscopy With a CdTe Pixel Detector and SIRIO Preamplifier at Deep Submicrosecond Signal-Processing Time
Nashashibi et al. A low noise FET with integrated charge restoration for radiation detectors
Nashashibi The Pentafet and its applications in high resolution and high rate radiation spectrometers
Yang et al. Performance of a large-area avalanche photodiode at low temperature for scintillation detection
Yang et al. 4H-SiC pin low-energy x-ray detectors with P-layer formed by Al implantation
Goulding et al. Recent results on the optoelectronic feedback preamplifier
Fiorini A charge sensitive preamplifier for high peak stability in spectroscopic measurements at high counting rates
Arnaboldi et al. Temperature characterization of deep and shallow defect centers of low noise silicon JFETs
Zaťko et al. On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs
Fiorini et al. Charge-sensitive preamplifier with continuous reset by means of the gate-to-drain current of the JFET integrated on the detector