Kang et al., 2012 - Google Patents
Solvent Dependence of Vacuum-Dried C60 Thin-Film TransistorsKang et al., 2012
- Document ID
- 18307023225346369038
- Author
- Kang W
- Kitamura M
- Kamura M
- Aomori S
- Arakawa Y
- Publication year
- Publication venue
- Japanese Journal of Applied Physics
External Links
Snippet
We demonstrated solution-processed C 60 thin-film transistors with high electron mobility. C 60 solutions in various organic solvents were dried in a vacuum chamber to obtain uniform thin films. While C 60 solution dried under atmospheric pressure produced a large number …
- 239000010409 thin film 0 title abstract description 36
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
- H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
- H01L51/0545—Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/005—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
- H01L51/0052—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H01L51/0053—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride, perylene tetracarboxylic diimide
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0001—Processes specially adapted for the manufacture or treatment of devices or of parts thereof
- H01L51/0002—Deposition of organic semiconductor materials on a substrate
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Duan et al. | Solution‐processed centimeter‐scale highly aligned organic crystalline arrays for high‐performance organic field‐effect transistors | |
| Azarova et al. | Fabrication of organic thin-film transistors by spray-deposition for low-cost, large-area electronics | |
| Bashir et al. | High‐Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere | |
| Li et al. | Solution-processed organic crystals for field-effect transistor arrays with smooth semiconductor/dielectric interface on paper substrates | |
| Paulus et al. | The effect of tuning the microstructure of TIPS-tetraazapentacene on the performance of solution processed thin film transistors | |
| Hamaguchi et al. | Single‐Crystal‐Like Organic Thin‐Film Transistors Fabricated from Dinaphtho [2, 3‐b: 2′, 3′‐f] thieno [3, 2‐b] thiophene (DNTT) Precursor–Polystyrene Blends | |
| Li et al. | Alignment of organic semiconductor microstripes by two-phase dip-coating | |
| Zhang et al. | Direct Patterning of Self‐Assembled Monolayers by Stamp Printing Method and Applications in High Performance Organic Field‐Effect Transistors and Complementary Inverters | |
| WO2007053303A3 (en) | N-type semiconductor materials for thin film transistors | |
| Xiao et al. | Controlled formation of large-area single-crystalline TIPS-pentacene arrays through superhydrophobic micropillar flow-coating | |
| KR101069585B1 (en) | Surface treated substrate for ink-jec printing | |
| WO2012080701A1 (en) | Semiconductor blend | |
| Tiao et al. | Effect of hydroxyl density on condensation behaviors of self-assembled monolayers and performance of pentacene-base organic thin-film transistors | |
| Lee et al. | Solvent-dependent performance of solution-processed small-molecule organic field-effect transistors | |
| WO2021182545A1 (en) | Production method for patterned organic film, production apparatus for patterned organic film, organic semiconductor device produced by same, and integrated circuit including organic semiconductor device | |
| Guo et al. | High-performance 2, 9-DPh-DNTT organic thin-film transistor by weak epitaxy growth method | |
| Wang et al. | Single crystal n-channel field effect transistors from solution-processed silylethynylated tetraazapentacene | |
| Cho et al. | Bulk heterojunction bipolar field-effect transistors processed with alkane dithiol | |
| Chou et al. | Controllable electrical performance of spray-coated semiconducting small molecule/insulating polymer blend thin film for organic field effect transistors application | |
| Zhao et al. | High ON/OFF ratio single crystal transistors based on ultrathin thienoacene microplates | |
| Fu et al. | Low-power high-mobility organic single-crystal field-effect transistor | |
| Jiang et al. | Ultrathin organic single crystals: fabrication, field-effect transistors and thickness dependence of charge carrier mobility | |
| Kang et al. | Solvent Dependence of Vacuum-Dried C60 Thin-Film Transistors | |
| KR20140043649A (en) | Method of manufacturing organic semiconductor film | |
| Kim et al. | Controlled polymer crystal/two-dimensional material heterostructures for high-performance photoelectronic applications |