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Fang et al., 2006 - Google Patents

B2H6 PLAD doped pMOS device performance

Fang et al., 2006

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Document ID
2303733242651031701
Author
Fang Z
Miller T
Winder E
Persing H
Arevalo E
Gupta A
Parrill T
Singh V
Qin S
McTeer A
Publication year
Publication venue
AIP Conference Proceedings

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Snippet

Plasma doping (PLAD) achieves high wafer throughput by directly extracting ions across the plasma sheath. PLAD profiles are typically surface peaked instead of retrograde as obtained from beamline (BL) implant. It may require optimization of PLAD energy and dose in order to …
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