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Caimi et al., 2021 - Google Patents

Scaled III–V-on-Si transistors for low-power logic and memory applications

Caimi et al., 2021

Document ID
2372909329251566871
Author
Caimi D
Sousa M
Karg S
Zota C
Publication year
Publication venue
Japanese Journal of Applied Physics

External Links

Snippet

III–V semiconductors, such as indium-rich InGaAs, are promising as replacements for the Si channel in CMOS technology. In this work, we demonstrate a scaled III–V FinFET technology, integrated on Si substrates using a direct wafer bonding technique. Logic …
Continue reading at iopscience.iop.org (other versions)

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